Although the device physics related to the operation of PCM have been widely studied since its … Developed by Stanford Ovshinsky, reknowned for his inventions in memories and solar panels, "phase change RAM" (PRAM, PCRAM) and "chalcogenide RAM" (C-RAM) are other names for phase change memory (PCM). Phase-change memory (PCM) is an emerging non-volatile memory technology that has recently been commercialized as storage-class memory in a computer system. The amor- phous phase … Phase Change Memory.pdf. Phase-change memory can be altered at the bit level and can be written more than 1 million times, whereas flash must be altered in large blocks of bits and can be written only tens of thousand of times. Phase-change memory is a type of random access memory (RAM) chip that uses the phase-changing abilities of chalcogenide glass. Author content. PCM is also being explored for non-von Neumann computing such as in-memory computing and neuromorphic computing. The scaling, novel mixes of chalcogenide glass and other developments may have provided the claimed performance improvements. Content uploaded by Kenneth Goodson. What does PCM stand for? Imprint CRC Press. This stems primarily from the fact that phase-change is a thermally driven process rather than an electronic process. Hardware Mechanism. states in so-called phase change materials[32]. ABSTRACT | In this paper, recent progress of phase change memory (PCM) is reviewed. Global Phase Change Memory market: Segment Analysis. Searches of databases of patents and patent applications yielded at least 20 patents assigned to Intel or Micron in recent years that either reference phase-change, PCM or PCMS directly or if they are written more generally about non-volatile memory, reference PCM/PCMS as a specific embodiment. Phase change memory (PCM) is a non-volatile solid-state memory technology based on the large resistivity contrast between the amorphous and crystalline states in phase change materials. 44. The transition between these phases takes place by controlled heating and cooling. Phase Change Memory book. The phrase in italics looks as if it has been put in as an HP plug, and could be interpreted to imply that PCM was a derivative of the HP research on memristors in 2008. Phase-change random access memory (PRAM) is a new form of nonvolatile memory based on using electrical charges to change areas on a glassy material from crystalline to random. As shown in Figure 1, in the amorphous phase, the material is highly disordered -- there is an absence of regular order to the crystalline lattice. PCM - Phase-change Memory. IBM’s new analog chip is based on phase-change memory. Phase-change memory is susceptible to a fundamental tradeoff of unintended vs. intended phase-change. ABSTRACT . Phase-change memory, to recap, is a chalcogenide (glass-like) material which changes its internal state from amorphous to crystalline and back again when the appropriate amount of electricity is applied to it. Phase-change memory, a nonvolatile memory type that stores data by changing the state of a material, is attractive because it’s supposedly faster than today’s flash memory with better endurance. If this phase change takes place more quickly, we’ve got an even faster phase change memory. This avoids any malicious user to overwrite PCM memory. Phase-change memory, a new material built from aluminum and antimony, shows promise for next-generation data-storage devices. 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